Abstract—FinFET devices are more prone to variations introduced by various intrinsic sources in the sub-nanometer region. In the present work, an effect of multi-fin with independent Line Edge Roughness (LER) has been analyzed to observe its influence on threshold voltage variation on intrinsic variability sources for a 14-nm FinFET device. The multi-fin analysis has been performed using the full 3-D device simulator for different fin shapes, i.e., curve-bent FinFET and thin-fat FinFETs. These independent LER FinFET devices parameters have been compared with the ideal FinFET (without LER) device. The result shows that multi-fin architecture helps mitigate intrinsic statistical variabilities adverse effects. For instance, the multi-fin device has 76.13% and 74.48% improvement in curve-bent FinFET and thin-fat FinFETs, respectively, compared to the single-fin devices. Finally, this work suggests that multi-fin devices are robust from variations introduced by various intrinsic variability sources.