Abstract—This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according to downscaling dimensions based on the electrical properties and semiconductor materials (GaN, Si3N4, ALGaN and Si). This is to solve difficulties with reducing dimensions and ensuring HEMT has the highest performance possible. This goal was met when the physical scaling restrictions of channel diameters for different HEMTs were concurrently shrunk without compromising their performance. A simula-tion study was done using four variable factors (length, width, of the channel and length, width of the source and drain). Three electrical characteristics were used to assess the impact of altering dimensions on the performance of each kind of HEMT: threshold voltage Vt, ON-state/OFF-state current (ION/IOFF) ratio, and transconductance gm. To conduct experimental simulations under the specified situation, the well-known Silvaco TCAD simulation tool was used. The acquired simulation results revealed that the optimum performance for the downscaling device was achieved at the channel length of 1.6μm, the channel width of 0.3μm, the length of source and drain is 0.4μm and finally the width of source and drain is 0.05 μm.
 

Index Terms—GaN, HEMT, channel length, downscaling, current gain

Cite:Firas Natheer Abdul-kadir, Nawfal Y. Jamil, Laith M. Al Taan, and Waheb A. Jabbar, "Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 12, No. 4, pp. 257-263, July 2023. Doi: 10.18178/ijeetc.12.4.257-263